參數(shù)資料
型號(hào)： BSM100GP60
廠商： INFINEON TECHNOLOGIES AG
元件分類： 功率晶體管
英文描述： Hochstzulassige Werte / Maximum rated values
中文描述： 135 A, 600 V, N-CHANNEL IGBT
封裝： MODULE-24
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 211K
代理商： BSM100GP60
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
σ
CE
-
-
100
nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
CC'+EE'
-
7
-
m
Diode Wechselrichter/ Diode Inverter
Durchlaspannung
forward voltage
min.
typ.
max.
V
GE
= 0V, T
vj
= 25°C, I
F
=
V
GE
= 0V, T
vj
= 125°C, I
F
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
100 A
100 A
2200A/μs
300 V
300 V
2200A/μs
300 V
300 V
2200A/μs
300 V
300 V
V
F
-
-
1,25
1,2
1,7
-
V
V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
68
90
-
-
A
A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
6,2
10,5
-
-
μAs
μAs
Abschaltenergie pro Puls
reverse recovery energy
E
RQ
-
-
1,3
2,2
typ.
-
-
mWs
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
50,0 A
50,0 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
1 mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V, T
vj
= 25°C, V
CE
=
V
GE
= 0V, T
vj
= 125°C, V
CE
=
C
ies
-
2,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
600 V
600 V
I
CES
-
-
1,5
2,0
500
-
μA
mA
Gate-Emitter Reststrom V
gate-emitter leakage current
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
300
nA
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaspannung
forward voltage
min.
typ.
max.
T
vj
= 25°C, I
F
=
T
vj
= 125°C, I
F
=
50,0 A
50,0 A
V
F
-
-
1,45
1,4
typ.
1,8
-
max.
V
V
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
min.
T
C
= 25°C
R
25
-
5
-
k
Abweichung von R
100
deviation of R
100
T
C
= 100°C, R
100
= 493
R/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25°C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
3(11)
DB-PIM-10.xls
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