參數(shù)資料
型號(hào): BS828
廠商: GE Security, Inc.
英文描述: DMOS Transistors (N-Channel)(N通道DMOS晶體管)
中文描述: DMOS晶體管(N溝道)(不適用通道的DMOS晶體管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 238K
代理商: BS828
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS828
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at I
D
= 100
μ
A, V
GS
= 0
V
(BR)DSS
240
250
V
Gate-Body Leakage Current
at V
GS
= 15 V, V
DS
= 0
I
GSS
10
nA
Drain Cutoff Current
at V
DS
= 130 V, V
GS
= 0
at V
DS
= 70 V, V
GS
= 0.2 V
I
DSS
I
DSX
1
25
μ
A
μ
A
Gate-Source Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
V
GS(th)
1.5
2.5
V
Drain-Source ON Resistance
at V
GS
= 2.8 V, I
D
= 100 mA
R
DS(ON)
5.5
8
Thermal Resistance Junction to Substrate
Backside
R
thSB
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
450
1)
K/W
Capacitances
at V
DS
= 20 V, V
GS
= 0, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iss
C
oss
C
rss
80
20
5
pF
pF
pF
Switching Times
at V
GS
= 10 V, V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
5
50
ns
ns
1)
Device on fiberglass substrate, see layout
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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