參數(shù)資料
型號(hào)： BSS8402DW-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： 115 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTC PACKAGE-6
文件頁數(shù)： 2/5頁
文件大?。?/td> 138K
代理商： BSS8402DW-7
DS30380 Rev. 4 - 2
2 of 5
BSS8402DW
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
C
= 125°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
@ T
j
= 125°C
BV
DSS
60
70
V
V
GS
= 0V, I
D
= 10 A
@ T
C
= 25°C
I
DSS
1.0
500
±10
μA
V
DS
= 60V, V
GS
= 0V
I
GSS
nA
V
GS
= ±20V, V
DS
= 0V
V
GS(th)
1.0
2.5
V
V
DS
= V
GS
, I
D
=-250 A
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
@ T
j
= 25°C
R
DS (ON)
3.2
4.4
7.5
13.5
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
I
D(ON)
g
FS
0.5
80
1.0
A
mS
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
= 25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
7.0
20
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150 , V
GEN
= 10V,
R
GEN
= 25
Turn-Off Delay Time
t
D(OFF)
11
20
ns
Electrical Characteristics N-CHANNEL - Q
1
, 2N7002 Section
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
-50
V
μA
μA
nA
V
GS
= 0V, I
D
= -250μA
V
DS
= -50V, V
GS
= 0V, T
J
= 25 C
V
DS
= -50V, V
GS
= 0V, T
J
= 125 C
V
DS
= -25V, V
GS
= 0V, T
J
= 25 C
V
GS
= 20V, V
DS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-15
-60
-100
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
I
GSS
10
nA
V
GS(th)
R
DS (ON)
g
FS
-0.8
-2.0
10
V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= 0.100A
V
DS
= -25V, I
D
= 0.1A
.05
S
C
iss
C
oss
C
rss
45
25
12
pF
pF
pF
V
= -25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
D(OFF)
10
18
ns
ns
V
DD
= -30V, I
= -0.27A,
R
GEN
= 50 , V
GS
= -10V
Electrical Characteristics P-CHANNEL - Q
2
, BSS84 Section
Note: 2. Short duration test pulse used to minimize self-heating effect.
@ T
A
= 25 C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
相關(guān)PDF資料
PDF描述
BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BST16 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BST39 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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