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參數(shù)資料
| 型號(hào)： | BS829 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（P溝道）性（P通道的DMOS晶體管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BS829 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS829
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at –I
D
= 100
μ
A, V
GS
= 0 V
–V
(BR)DSS
400
430
–
V
Gate-Body Leakage Current, Forward
at –V
GSF
= 20 V, V
DS
= 0 V
–I
GSSF
–
–
100
nA
Gate-Body Leakage Current, Reverse
at –V
GSR
= 20 V, V
DS
= 0 V
–I
GSSR
–
–
100
nA
Drain Cutoff Current
at –V
DS
= 400 V, V
GS
= 0 V
–I
DSS
–
–
500
μ
A
Gate-Source Threshold Voltage
at V
GS
= V
DS
, –I
D
= 250
μ
A
–V
GS(th)
1
1.5
2.5
V
Drain-Source ON Resistance
at V
GS
= 5 V, –I
D
= 100 mA
R
DS(on)
–
40
50
Capacitance
at –V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iSS
C
OSS
C
rSS
–
–
–
200
30
10
–
–
–
pF
pF
pF
Switching Times
at –V
GS
= 10 V, –V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
–
–
10
50
–
–
ns
ns
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
320
1)
K/W
1)
Device on fiberglass substrate, see layout
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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