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參數(shù)資料
| 型號(hào)： | BS817 |
| 廠商： | Diodes Inc. |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| 中文描述： | P溝道增強(qiáng)型DMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 58K |
| 代理商： | BS817 |
D
S
11401 Rev. D-3
2 of 2
BS817
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
-V
(BR)DSS
Min
200
Typ
230
Max
—
Unit
V
Test Condition
-I
D
= 100μA, V
GS
= 0
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
-I
GSS
—
—
10
nA
-V
GS
= 15V, V
DS
= 0
Drain-Source Cutoff Current
-I
DSS
-I
DSX
-V
GS(th)
r
DS(ON)
R
JSB
R
JA
C
iss
C
oss
C
rss
—
—
30
1.0
3.5
50
320
400
nA
μA
V
-V
DS
= 130V, V
GS
= 0
-V
DS
= 70V, -V
GS
= 0.2V
-V
GS
= V
DS
, -I
D
= 1.0mA
-V
GS
= 2.8V, -I
D
= 20mA
Note 1
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Substrate Backside
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Switching Times
Turn-On Time
Turn-Off Time
—
—
—
—
2.8
30
—
—
58
8.0
1.5
K/W
K/W
Note 1
—
—
pF
-V
= 20V, V
GS
= 0,
f = 1.0MHz
t
ON
t
OFF
—
5.0
15
—
ns
-V
GS
= 10V, -V
DS
= 10V,
R
D
= 100
Notes:
1. Device mounted on ceramic substrate 0.7mm x 2.5 cm
2
area.
2. Pulse test: Pulse width = 80μs, duty cycle = 1%.
0
100
200
300
400
500
0
100
200
P
d
T
, SUBSTRATE TEMPERATURE ( C)
Fig. 1, Power Derating Curve
SB
See Note 1
1
10
100
0
10
20
-
,
D
-V
, GATE-SOURCE VOLTAGE (VOLTS)
Fig. 2, Drain-Source Resistance vs Gate-Source Voltage
GS
-V
= 0.1V
DS
T = 25 C
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