- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385193 > BS850 (GE Security, Inc.) DMOS Transistors (P-Channel)(P通道DMOS晶體管) PDF資料下載
參數(shù)資料
| 型號： | BS850 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（P溝道）性（P通道的DMOS晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 248K |
| 代理商： | BS850 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS850
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at –I
D
= 100
μ
A, V
GS
= 0
–V
(BR)DSS
60
90
–
V
Gate Threshold Voltage
at V
GS
= V
DS
, –I
D
= 1 mA
V
GS(th)
1.0
2
3.0
V
Gate-Body Leakage Current
at –V
GS
= 15 V, V
DS
= 0
–I
GSS
–
–
10
nA
Drain Cutoff Current at –V
DS
= 25 V, V
GS
= 0
–I
DSS
–
–
0.5
μ
A
Drain-Source ON Resistance
at –V
GS
= 10 V, –I
D
= 200 mA
R
DS(ON)
–
3.5
5.0
Thermal Resistance Junction to Substrate
Backside
R
thSB
–
–
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
450
1)
K/W
Forward Transconductance
at –V
DS
= 10 V, –I
D
= 200 mA, f = 1 MHz
g
m
–
200
–
mS
Input Capacitance
at –V
DS
= 10 V, V
GS
= 0, f = 1 MHz
C
iss
–
60
–
pF
Switching Times
at –V
GS
= 10 V, –V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
–
–
5
25
–
–
ns
ns
1)
Device on fiberglass substrate, see layout
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS870 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BS870 | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| BS980-GS18 | RF PIN Diode |
| BSM100GD120DLC | IGBT-Module |
| BSM100GP60 | Hochstzulassige Werte / Maximum rated values |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS850/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 250MA I(D) | TO-236AB |
| BS850/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 250MA I(D) | TO-236AB |
| BS850\E9 | 功能描述:MOSFET USE 781-TP0610K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS85C20-3 | 制造商:HOLTEK 制造商全稱:Holtek Semiconductor Inc 功能描述:Touch Key Flash Type 8-Bit MCU with LCD/LED Driver |
| BS-87.500MBB-T | 功能描述:標(biāo)準(zhǔn)時(shí)鐘振蕩器 87.5MHz 3.3Volt 50ppm -10C +70C RoHS:否 制造商:AVX 產(chǎn)品:Standard Clock Oscillators 封裝 / 箱體:7 mm x 5 mm 頻率:75 MHz 頻率穩(wěn)定性:50 PPM 電源電壓:2.5 V 負(fù)載電容: 端接類型:SMD/SMT 最小工作溫度:0 C 最大工作溫度:+ 70 C 輸出格式:LVDS 尺寸: 封裝:Reel 系列: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。