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參數(shù)資料
| 型號： | BSP75GTC |
| 廠商： | ZETEX PLC |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 60V self-protected low-side IntelliFETTM MOSFET switch |
| 中文描述： | 3 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | TO-261AA, SOT-223, 4 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 382K |
| 代理商： | BSP75GTC |
BSP75G
Issue 4 - May 2006
Zetex Semiconductors plc 2006
5
www.zetex.com
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
60
70
75
V
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=+5V, I
D
=0.7A
Off-state drain current
0.1
3
A
Off-state drain current
3
15
A
Input threshold voltage
(*)
Input current
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
() The drain current is limited to a reduced value when V
DS
exceeds a safe level.
() Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
1
2.1
V
0.7
1.2
mA
Input current
1.5
2.7
mA
Input current
4
7
mA
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
()
Current limit
()
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
520
675
m
R
DS(on)
385
550
m
V
IN
=+10V, I
D
=0.7A
I
D(LIM)
I
D(LIM)
0.7
2
1.1
3
1.75
4
A
A
V
IN
=+5V, V
DS
>5V
V
IN
=+10V, V
DS
>5V
t
on
2.2
10
s
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
Turn-off time (V
IN
to 90% I
D
)
t
off
13
20
s
Slew rate on (70 to 50% V
DD
)
-dV
DS
/dt
on
10
20
V/ s
Slew rate off (50 to 70% V
DD
)
dV
DS
/dt
off
3.2
10
V/ s
Protection functions
()
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy Tj=25
°
C
Unclamped single pulse
inductive energy Tj=150
°
C
Inverse diode
Source drain voltage
V
PROT
4.5
V
T
JT
150
175
°
C
10
°
C
mJ
E
AS
550
I
D(ISO)
=0.7A, V
DD
=32V
E
AS
200
mJ
I
D(ISO)
=0.7A, V
DD
=32V
V
SD
1
V
IN
=0V, -I
D
=1.4A
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