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參數(shù)資料
| 型號(hào)： | BSP75GTA |
| 廠商： | ZETEX PLC |
| 元件分類(lèi)： | 外設(shè)及接口 |
| 英文描述： | 60V self-protected low-side IntelliFETTM MOSFET switch |
| 中文描述： | 3 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | TO-261AA, SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 382K |
| 代理商： | BSP75GTA |
BSP75G
Issue 4 - May 2006
Zetex Semiconductors plc 2006
5
www.zetex.com
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
60
70
75
V
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=+5V, I
D
=0.7A
Off-state drain current
0.1
3
A
Off-state drain current
3
15
A
Input threshold voltage
(*)
Input current
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
() The drain current is limited to a reduced value when V
DS
exceeds a safe level.
() Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
1
2.1
V
0.7
1.2
mA
Input current
1.5
2.7
mA
Input current
4
7
mA
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
()
Current limit
()
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
520
675
m
R
DS(on)
385
550
m
V
IN
=+10V, I
D
=0.7A
I
D(LIM)
I
D(LIM)
0.7
2
1.1
3
1.75
4
A
A
V
IN
=+5V, V
DS
>5V
V
IN
=+10V, V
DS
>5V
t
on
2.2
10
s
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
Turn-off time (V
IN
to 90% I
D
)
t
off
13
20
s
Slew rate on (70 to 50% V
DD
)
-dV
DS
/dt
on
10
20
V/ s
Slew rate off (50 to 70% V
DD
)
dV
DS
/dt
off
3.2
10
V/ s
Protection functions
()
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy Tj=25
°
C
Unclamped single pulse
inductive energy Tj=150
°
C
Inverse diode
Source drain voltage
V
PROT
4.5
V
T
JT
150
175
°
C
10
°
C
mJ
E
AS
550
I
D(ISO)
=0.7A, V
DD
=32V
E
AS
200
mJ
I
D(ISO)
=0.7A, V
DD
=32V
V
SD
1
V
IN
=0V, -I
D
=1.4A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BSP75GTA-CUT TAPE | 制造商:DIODES 功能描述:BSP75 60V 0.55 Ohm Self-Protected Low-Side IntelliFETTM MOSFET Switch- SOT-223 |
| BSP75GTC | 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:60V self-protected low-side IntelliFETTM MOSFET switch |
| BSP75N | 功能描述:電源開(kāi)關(guān) IC - 配電 Smart Low Side 1 Ch 60 V 1.8 W RoHS:否 制造商:Exar 輸出端數(shù)量:1 開(kāi)啟電阻（最大值）:85 mOhms 開(kāi)啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BSP75N | 制造商:Infineon Technologies AG 功能描述:MOSFET SMART SWITCH SOT-223 |
| BSP75N_08 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Smart Lowside Power Switch |
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