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參數(shù)資料
| 型號(hào)： | BSS84DW |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙P溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BSS84DW |
DS30204 Rev. C-2
2 of 2
BSS84DW
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS(Note 2)
Drain-Source Breakdown Voltage
BV
DSS
-50
-75
V
V
GS
= 0V, I
D
= -250 A
Zero Gate Voltage Drain Current
I
DSS
-15
-60
-100
μA
μA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25 C
V
DS
= -50V, V
GS
= 0V, T
J
= 125 C
V
DS
= -25V, V
GS
= 0V, T
J
= 25 C
Gate-Body Leakage
I
GSS
10
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
-0.8
-1.6
-2.0
V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (ON)
6
10
V
GS
= -5V, I
D
= 0.100A
Forward Transconductance
g
FS
.05
S
V
DS
= -25V, I
D
= 0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
45
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50 , V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
18
ns
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
3. R
GS
20K .
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| BSS84DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW-7 | 功能描述:MOSFET -50V 200mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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