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參數(shù)資料
| 型號： | BSS123-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 45K |
| 代理商： | BSS123-7 |
SOT23
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
%
PARTMARKING DETAIL
– SA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
tot
T
j
:T
stg
100
V
Drain-Gate Voltage
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
170
mA
680
mA
Gate-Source Voltage
±
20
V
Peak Gate-Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
I
GSS
Zero Gate Voltage
Drain Current
360
mW
-55 to +150
°C
MIN.
MAX. UNIT
CONDITIONS.
I
D
=0.25mA, V
GS
=0V
BV
DSS
100
V
V
GS(th)
0.8
2.2
2.8
V
I
D
=1mA, V
DS
= V
GS
10
1
2
50
15
60
10
6
nA
μ
A
μ
A
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, T=125°C
(2)
V
DS
=20V, V
GS
=0V
V
GS
=10V, I
D
=100mA
I
DSS
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
For typical characteristics graphs see ZVN3310F datasheet.
R
DS(on)
5
g
fs
80
120
mS
V
DS
=25V, I
D
=100mA
C
iss
C
oss
20
9
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
C
rss
4
pF
t
d(on)
t
r
t
d(off)
t
f
10
10
15
25
ns
ns
ns
ns
V
DD
≈
30V, I
D
=280mA
BSS123
D
G
S
3 - 70
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSS1237F | 制造商: 功能描述: 制造商:undefined 功能描述: |
| BSS123-7-F | 功能描述:MOSFET 100V 360mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS123-7-F-31 | 制造商:DIODES 功能描述:N-CHANNEL MOSFET / SOT-23 (LEAD FREE) |
| BSS123A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| BSS123ATA | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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