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參數(shù)資料
| 型號： | BSS8402DW |
| 廠商： | Diodes Inc. |
| 英文描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 互補對增強型場效應晶體管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BSS8402DW |
DS30380 Rev. 4 - 2
3 of 5
BSS8402DW
www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
,
DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
GS
5.5V
10V
5.0V
2.1V
I
D
0
1
2
3
4
5
0
0.2
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
V
= 5.0V
GS
T = 25
°
C
V
= 10V
GS
6
7
0.4
0.6
0.8
1.0
1.0
1.5
2.0
2.5
3.0
-55
-30
-5
20
45
70
95
120
145
T, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs Junction Temperature
V
I = 200mA
= 10V,
GS
0
V
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
I = 500mA
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
0
2
1
4
3
0
0.2
0.4
0.6
0.8
1
V
G
G
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
6
5
8
7
10
9
V
= 10V
DS
T = -55°C
T = +25°C
T = +125°C
T = +75°C
0
50
100
150
200
250
0
25
50
75
100
125
150
175
200
P
d
T , AMBIENT TEMPERATURE (
°
C)
Fig. 6 Max Power Dissipation vs.
Ambient Temperature
N-CHANNEL - 2N7002 SECTION
T
C
U
D
O
R
P
W
E
N
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSS8402DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS8402DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS8402DW_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS8402DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS8402DW7 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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