參數(shù)資料
型號: BSM100GD120DLC
廠商: INFINEON TECHNOLOGIES AG
元件分類: 功率晶體管
英文描述: IGBT-Module
中文描述: 160 A, 1200 V, N-CHANNEL IGBT
封裝: ECONO 3, 39 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 85K
代理商: BSM100GD120DLC
Technische Information / Technical Information
BSM100GD120DLC
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
R
thJC
-
-
0,19
K/W
Diode/Diode, DC
-
-
0,36
K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λ
Paste
= 1 W/m * K /
λ
grease
= 1 W/m * K
R
thCK
-
0,009
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
°C
Betriebstemperatur
operation temperature
T
op
-40
-
125
°C
Lagertemperatur
storage temperature
T
stg
-40
-
150
°C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AL
2
O
3
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
mounting torque
screw M5
M1
3
6
Nm
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Nm
Gewicht
weight
G
300
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
Seriendatenblatt_BSM100GD120DLC.xls
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