參數(shù)資料
型號： BSM150GB120DLC
廠商： INFINEON TECHNOLOGIES AG
元件分類： 功率晶體管
英文描述： Technische Information / Technical Information
中文描述： 300 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-7
文件頁數(shù)： 2/8頁
文件大?。?/td> 98K
代理商： BSM150GB120DLC
Technische Information / Technical Information
BSM150GB120DLC
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
d,on
-
0,05
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,06
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
r
-
0,05
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,07
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
d,off
-
0,57
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,57
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 25°C
t
f
-
0,04
-
μs
V
GE
= ±15V, R
G
= 5,6
, T
vj
= 125°C
-
0,05
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 150A, V
CE
= 600V, V
GE
= 15V
R
G
= 5,6
, T
vj
= 125°C, L
S
= 60nH
E
on
-
17
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 150A, V
CE
= 600V, V
GE
= 15V
R
G
= 5,6
, T
vj
= 125°C, L
S
= 60nH
E
off
-
18
-
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V, R
G
= 5,6
T
Vj
≤
125°C, V
CC
=900V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
950
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
25
-
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
T
C
=25°C
R
CC‘+EE‘
-
0,6
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 150A, V
GE
= 0V, T
vj
= 25°C
V
F
-
1,8
2,3
V
I
F
= 150A, V
GE
= 0V, T
vj
= 125°C
-
1,7
V
Rückstromspitze
peak reverse recovery current
I
F
= 150A, - di
F
/dt = 3100A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
I
RM
-
180
-
A
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
220
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 150A, - di
F
/dt = 3100A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
Q
r
-
17
-
μAs
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
32
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 150A, - di
F
/dt = 3100A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
E
rec
-
4
-
mWs
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
10
-
mWs
2(8)
DB_BSM150GB120DLC.xls
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSM150GB120DN2 功能描述:IGBT 模塊 1200V 150A DUAL RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM150GB120DN2_E3166 功能描述:IGBT 模塊 N-CH 1.2KV 210A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM150GB120DN2_E3166C-SE 制造商:Infineon Technologies AG 功能描述:
BSM150GB120DN2E3166 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
BSM150GB120DN2F 功能描述:IGBT 模塊 IGBT 1200V 150A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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