
625
18.6
Flash Memory Characteristics
Table 18-12 lists the flash memory characteristics.
Table 18-12 Flash Memory Characteristics
Conditions: V
CC = 2.7 V to 3.6 V, AVCC = 2.7 V to 3.6 V, Vref = AVCC, VSS = AVSS = 0 V,
V
CC = 3.0 V to 3.6 V(program/erase operating voltage range),
T
a = -20°C to +75°C (program/erase operating temperature range)
Item
Symbol Min
Typ
Max
Unit
Test
Conditions
Programming time*1, *2, *4
t
P
—
40
200
ms/128
bytes
Erase time*1, *3, *5
t
E
—
20
1000
ms/block
Rewrite time
N
WEC
—
100
Times
Programming
Wait time after SWE1 bit setting*1
t
sswe
11—
s
Wait time after PSU1 bit setting*1
t
spsu
50
—
s
Wait time after P1 bit setting*1, *4
t
sp10
8
1012s
t
sp30
28
30
32
s
1
≤ n ≤ 6
t
sp200
198
200
202
s
7
≤ n ≤ 1000
Wait time after P1 bit clearing*1
t
cp
55—
s
Wait time after PSU1 bit clearing*1 t
cpsu
55—
s
Wait time after PV1 bit setting*1
t
spv
44—
s
Wait time after H'FF dummy write*1 t
spvr
22—
s
Wait time after PV1 bit clearing*1
t
cpv
22—
s
Wait time after SWE1 bit clearing*1 t
cswe
100
—
s
Maximum number of writes*1, *4
N1
——6*4
Times
N2
—
994*4 Times
Erasing
Wait time after SWE1 bit setting*1
t
sswe
11—
s
Wait time after ESU1 bit setting*1
t
sesu
100
—
s
Wait time after E1 bit setting*1, *5
t
se
10
100
ms
Wait time after E1 bit clearing*1
t
ce
10
—
s
Wait time after ESU1 bit clearing*1 t
cesu
10
—
s
Wait time after EV1 bit setting*1
t
sev
20
—
s
Wait time after H'FF dummy write*1 t
sevr
22—
s
Wait time after EV1 bit clearing*1
t
sev
44—
s
Wait time after SWE1 bit clearing*1 t
cswe
100
—
s
Maximum number of erases*1, *5
N
—
100
Times
Notes:
*1 Follow the program/erase algorithms when making the time settings.
*2 Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set in flash
memory control register 1 (FLMCR1). Does not include the program-verify time.)