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15.15
Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
Use the specified voltages and timing for programming and erasing
Applied voltages in excess of the rating can permanently damage the device. Use a PROM
programmer that supports the Hitachi microcomputer device type with 256-kbyte on-chip flash
memory (FZTAT256V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering on and off (See figures 15-29 to 15-31)
Do not apply a high level to the FWE pin until V
CC has stabilized. Also, drive the FWE pin low
before turning off V
CC.
When applying or disconnecting V
CC power, fix the FWE pin low and place the flash memory in
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
FWE application/disconnection (See figures 15-29 to 15-31)
FWE application should be carried out when MCU operation is in a stable condition. If MCU
operation is not stable, fix the FWE pin low and set the protection state.
The following points must be observed concerning FWE application and disconnection to prevent
unintentional programming or erasing of flash memory:
Apply FWE when the V
CC voltage has stabilized within its rated voltage range.
In boot mode, apply and disconnect FWE during a reset.
In user program mode, FWE can be switched between high and low level regardless of the
reset state. FWE input can also be switched during execution of a program in flash memory.
Do not apply FWE if program runaway has occurred.
Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E bits in FLMCR1
are cleared.
Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, and E bits are not set by mistake when
applying or disconnecting FWE.