型號 廠商 描述
mt4c4m4a1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4c4m4ax
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc4m4b1tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc4m4a1tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4c4m4b1tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4c4m4a1tg-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. DRAM
mt4lc4m4e8tgs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 MEG x 4 EDO DRAM
mt4c4m4e8tgs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. ER 14C 14#16 PIN PLUG
mt4lc4m4e9djs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 MEG x 4 EDO DRAM
mt4c4m4e9djs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 MEG x 4 EDO DRAM
mt4lc4m4e9tgs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 MEG x 4 EDO DRAM
mt4c4m4e9tgs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 4 MEG x 4 EDO DRAM
mt4ldt832hg-5xs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. SMALL-OUTLINE DRAM MODULE
mt4ldt832hg-6xs
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. SMALL-OUTLINE DRAM MODULE
mt2ldt432h
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No
mt54w4mh8bf-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh8bf-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh8bf-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9b
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9b-4
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9b-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9b-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9b-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9bf-4
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9bf-5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9bf-6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt54w4mh9bf-7.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 36Mb QDR⑩II SRAM 2-WORD BURST
mt55l128l32f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 3.3V I/O，128K x 32，F(xiàn)low-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128l36f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 3.3V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128v32f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2.5V I/O， 128K x 32，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128v36f1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2.5V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128l32p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 3.3V I/O，128K x 32，F(xiàn)low-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128l36p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 3.3V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(3.3V或輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128v32p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2.5V I/O，128K x 32，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l128v36p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2.5V I/O，128K x 36，F(xiàn)low-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l256l18p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 3.3V I/O，256K x 18,Flow-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l256v18p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 2.5V I/O，256K x 18,Flow-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
mt55l512l18p-1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. IBM AT-AT NULL MODEM CABL15 FT FF
mt58l128l18d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM)
mt58l64l32d
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 32，3.3V I/O, Pipelined, Double-Cycle Deselect，SyncBurst SRAM(2Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)RAM)
mt58l128l18f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
mt58l128v18f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
mt58l64l32f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
mt58l64l36f
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
mt58l128l18p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
mt58l128v18p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
mt58l64l32p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
mt58l64v32p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
mt58l64l36p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)
mt58l64v36p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Micron Technology, Inc. 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器)