參數(shù)資料
型號: MT58L64L32D
廠商: Micron Technology, Inc.
英文描述: 64K x 32,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
中文描述: 64K的x 32,3.3六/ O的流水線,雙循環(huán)取消,SyncBurst的SRAM(處理器,3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)內(nèi)存)
文件頁數(shù): 15/24頁
文件大?。?/td> 432K
代理商: MT58L64L32D
15
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L128L18D_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, DCD SYNCBURST SRAM
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
θ
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Thermal Resistance
(Junction to Top of Case)
θ
JC
8
°C/W
1
NOTE:
1. This parameter is sampled.
2. Preliminary package data.
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1, 2
Junction to Case (Top)
Junction to Pins
(Bottom)
q
JC
q
JB
9
17
°C/W
°C/W
1, 2
1, 2
相關(guān)PDF資料
PDF描述
MT58L128L18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128V18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L64L32F 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L64L36F 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128L18P 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
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