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參數(shù)資料
| 型號(hào)： | MT2LDT432H |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | 小外形DRAM模塊 |
| 文件頁(yè)數(shù)： | 9/25頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | MT2LDT432H |
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9
4, 8 Meg x 32 DRAM SODIMMs
DM89.p65
–
Rev. 12/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
4, 8 MEG x 32
DRAM SODIMMs
ADVANCE
FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 19) (V
DD
= +3.3V ±0.3V)
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
Row-address hold time
RAS# pulse width
RAS# pulse width (Self Refresh)
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (4,096 cycles)
Refresh period
“
S
”
version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time (Self Refresh)
READ command hold time (referenced to RAS#)
RAS# hold time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
-6
SYMBOL
t
RAH
t
RAS
t
RASS
t
RASP
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
8
50
100
50
90
18
0
0
MAX
MIN
10
60
100
60
110
20
0
0
MAX
UNITS
ns
ns
μs
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
10,000
10,000
25
125,000
125,000
14
16
64
128
64
128
25
30
0
90
0
13
13
2
8
40
0
8
10
10
40
0
105
0
15
15
2
10
45
0
10
10
10
25
16
50
50
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