- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384757 > MT4LDT832HG-5XS (Micron Technology, Inc.) SMALL-OUTLINE DRAM MODULE PDF資料下載
參數(shù)資料
| 型號(hào)： | MT4LDT832HG-5XS |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SMALL-OUTLINE DRAM MODULE |
| 中文描述： | 小外形DRAM模塊 |
| 文件頁(yè)數(shù)： | 10/25頁(yè) |
| 文件大小： | 399K |
| 代理商： | MT4LDT832HG-5XS |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)
10
4, 8 Meg x 32 DRAM SODIMMs
DM89.p65
–
Rev. 12/98
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1998, Micron Technology, Inc.
4, 8 MEG x 32
DRAM SODIMMs
ADVANCE
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 19) (V
DD
= +3.3V ±0.3V)
AC CHARACTERISTICS - EDO PAGE MODE OPTION
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to
“
Don
’
t Care
”
during Self Refresh
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output buffer turn-off delay
EDO-PAGE-MODE READ or WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
-5
-6
SYMBOL
t
AA
t
ACH
t
AR
t
ASC
t
ASR
t
CAC
t
CAH
t
CAS
t
CHD
t
CHR
t
CLZ
t
COH
t
CP
t
CPA
t
CRP
t
CSH
t
CSR
t
CWL
t
DH
t
DS
t
OFF
t
PC
t
RAC
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
MIN
MAX
25
MIN
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
ns
ns
NOTES
12
38
0
0
15
45
0
0
13
15
8
8
15
8
0
3
8
10
10
15
10
0
3
10
10,000
10,000
25
4
13
28
35
5
38
5
8
8
0
0
20
5
45
5
10
10
0
0
25
4
18
18
12
15
17, 23
50
60
9
9
50
50
100
84
11
12
10
60
60
100
104
14
15
10,000
125,000
10,000
125,000
25
14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT4LDT832HG-6XS | SMALL-OUTLINE DRAM MODULE |
| MT2LDT432H | Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No |
| MT54W4MH8BF-5 | 36Mb QDR⑩II SRAM 2-WORD BURST |
| MT54W4MH8BF-6 | 36Mb QDR⑩II SRAM 2-WORD BURST |
| MT54W4MH8BF-7.5 | 36Mb QDR⑩II SRAM 2-WORD BURST |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT4LDT832HG-6X | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SMALL-OUTLINE DRAM MODULE |
| MT4LDT832HG-6XS | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SMALL-OUTLINE DRAM MODULE |
| MT4LSDT1632 | 制造商:Micron Technology Inc 功能描述:64MB 16MX32 SDRAM MODULE PBF 100 P DIMM 3.3V - Trays |
| MT4LSDT1632UDG-10F1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 512MBIT 100UDIMM - Trays |
| MT4LSDT1632UDG-10G1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 512MBIT 100UDIMM - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。