參數資料
型號: MT4C4M4E9TGS
廠商: Micron Technology, Inc.
英文描述: 4 MEG x 4 EDO DRAM
中文描述: 4邁可× 4 EDO公司的DRAM
文件頁數: 3/20頁
文件大小: 360K
代理商: MT4C4M4E9TGS
3
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 4
FPM DRAM
FUNCTIONAL BLOCK DIAGRAM – 2K REFRESH
4,096
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
RAS#
12
12
10
NO. 2 CLOCK
GENERATOR
REFRESH
CONTROLLER
NO. 1 CLOCK
GENERATOR
V
DD
Vss
12
WE#
CAS#
10
COLUMN-
ADDRESS
BUFFER(10)
ROW-
ADDRESS
BUFFERS (12)
R
D
4,096
1,024
COLUMN
DECODER
OE#
DQ0
DQ1
DQ2
DQ3
4
4
4
4
REFRESH
COUNTER
1,024
4,096 x 1,024 x 4
MEMORY
ARRAY
SENSE AMPLIFIERS
I/O GATING
DATA-OUT
BUFFER
DATA-IN
BUFFER
C
S
4,096
R
(
2,048
2,048
2,048
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
RAS#
11
11
11
NO. 2 CLOCK
GENERATOR
REFRESH
CONTROLLER
NO. 1 CLOCK
GENERATOR
V
DD
V
SS
11
WE#
CAS#
10
COLUMN-
ADDRESS
BUFFER(11)
ROW-
ADDRESS
BUFFERS (11)
R
D
2,048
1,024
COLUMN
DECODER
OE#
DQ0
DQ1
DQ2
DQ3
4
4
4
4
REFRESH
COUNTER
1
R
(
R
(
1,024
4,096 x 1,024 x 4
MEMORY
ARRAY
SENSE AMPLIFIERS
I/O GATING
DATA-OUT
BUFFER
DATA-IN
BUFFER
C
S
2,048
R
(
FUNCTIONAL BLOCK DIAGRAM – 4K REFRESH
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