參數(shù)資料
型號: MT58L64V32P
廠商: Micron Technology, Inc.
英文描述: 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
中文描述: 64K的× 32,流水線,SCD的SyncBurst的SRAM(處理器,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
文件頁數(shù): 16/25頁
文件大小: 487K
代理商: MT58L64V32P
16
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Thermal Resistance
(Junction to Top of Case)
q
JC
8
°C/W
1
NOTE:
1. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
2. Preliminary package data.
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
q
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1, 2
Junction to Case (Top)
Junction to Pins
(Bottom)
q
JC
q
JB
9
17
°C/W
°C/W
1, 2
1, 2
相關(guān)PDF資料
PDF描述
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MT58L64V36P 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L128L32D1 128K x 32,3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L128L36D1 128K x 36,3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
MT58L128L32P1 128K x 32,Pipelined, SCD SyncBurst SRAM(4Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
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參數(shù)描述
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