參數(shù)資料
型號(hào): MT58L64L32F
廠商: Micron Technology, Inc.
英文描述: 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
中文描述: 64K的× 32,流量通過SyncBurst的SRAM(處理器,流通式同步脈沖靜態(tài)內(nèi)存)
文件頁數(shù): 8/24頁
文件大小: 459K
代理商: MT58L64L32F
8
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
FBGA PIN DESCRIPTIONS
x18
6R
6P
x32/x36
6R
6P
2A, 2B, 3P,
3R, 4P, 4R,
8P, 8R, 9P,
9R, 10A, 10B
10P, 10R
5B
5A
4A
4B
SYMBOL
SA0
SA1
SA
TYPE
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered and must
meet the setup and hold times around the rising edge of CLK.
2A, 2B, 3P,
3R, 4P, 4R,
8P, 8R, 9P,
9R, 10A, 10B
10P, 10R, 11A
5B
4A
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQas and DQPa; BWb# controls DQbs and DQPb. For
the x32 and x36 versions, BWa# controls DQas and DQPa; BWb#
controls DQbs and DQPb; BWc# controls DQcs and DQPc; BWd#
controls DQds and DQPd. Parity is only available on the x18 and x36
versions.
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the
rising edge of CLK.
Global Write: This active LOW input allows a full 18-, 32-, or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
Clock: This signal registers the address, data, chip enable, byte write
enables, and burst control inputs on its rising edge. All synchronous
inputs must meet setup and hold times around the clock’s rising
edge.
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
Output Enable: This
active LOW, asynchronous input enables the
data I/O output drivers.
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after the
external address is loaded. A HIGH on ADV# effectively causes wait
states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
7A
7A
BWE#
Input
7B
7B
GW#
Input
6B
6B
CLK
Input
3A
3A
CE#
Input
6A
6A
CE2#
Input
11H
11H
ZZ
Input
3B
3B
CE2
Input
8B
8B
OE#(G#)
Input
9A
9A
ADV#
Input
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相關(guān)PDF資料
PDF描述
MT58L64L36F 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128L18P 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L128V18P 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L64L32P 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
MT58L64V32P 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲(chǔ)器)
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