參數(shù)資料
型號(hào): MT4C4M4E9DJS
廠商: Micron Technology, Inc.
英文描述: 4 MEG x 4 EDO DRAM
中文描述: 4邁可× 4 EDO公司的DRAM
文件頁(yè)數(shù): 18/20頁(yè)
文件大?。?/td> 360K
代理商: MT4C4M4E9DJS
18
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 4
FPM DRAM
SELF REFRESH CYCLE
(Addresses and OE# = DON’T CARE)
tRP
V
IL
RAS#
tRAS
OPEN
tCHR
tCSR
V
IL
CAS#
Q
tRP
tRAS
tRPC
tCSR
tRPC
tCHR
tCP
V
IL
tWRP
tWRH
tWRP
tWRH
WE#
DON’T CARE
UNDEFINED
NOTE:
1. Once
t
RASS (MIN) is met and RAS# remains LOW, the DRAM will enter self refresh mode.
2. Once
t
RPS is satisfied, a complete burst of all rows should be executed if RAS#-only or burst CBR refresh is used.
-5
-6
SYMBOL
t
RPC
t
RPS
t
WRH
t
WRP
MIN
5
90
8
8
MAX
MIN
5
105
10
10
MAX
UNITS
ns
ns
ns
ns
TIMING PARAMETERS
-5
-6
SYMBOL
t
CHD
t
CP
t
CSR
t
RASS
t
RP
MIN
15
8
5
100
30
MAX
MIN
15
10
5
100
40
MAX
UNITS
ns
ns
ns
μs
ns
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