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參數(shù)資料
| 型號： | MT58L64L36F |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM) |
| 中文描述： | 64K的× 36，流量通過SyncBurst的SRAM（處理器，流通式同步脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 459K |
| 代理商： | MT58L64L36F |
15
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
TQFP CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CONDITIONS
T
A
= 25°C; f = 1 MHz;
V
DD
= 3.3V
SYMBOL
C
I
C
O
C
A
C
CK
TYP
2.7
4
2.5
2.5
MAX
3.5
5
3.5
3.5
UNITS
pF
pF
pF
pF
NOTES
1
1
1
1
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
θ
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1
Thermal Resistance
(Junction to Top of Case)
θ
JC
8
°C/W
1
NOTE:
1. This parameter is sampled.
2. Preliminary package data.
FBGA CAPACITANCE
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
CONDITIONS
SYMBOL
C
I
C
O
C
CK
TYP
2.5
4
2.5
MAX
3.5
5
3.5
UNITS
pF
pF
pF
NOTES
1, 2
1, 2
1, 2
T
A
= 25°C; f = 1 MHz
FBGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
CONDITIONS
SYMBOL
θ
JA
TYP
40
UNITS NOTES
°C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
1, 2
Junction to Case (Top)
Junction to Pins
(Bottom)
θ
JC
θ
JB
9
17
°C/W
°C/W
1, 2
1, 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L128L18P | 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128V18P | 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L64L32P | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L64V32P | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L64L36P | 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L64L36FT-10 | 制造商:Cypress Semiconductor 功能描述: |
| MT58L64L36FT-6.8 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L64L36FT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L64L36FT-8 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L64L36FT-8.5 | 制造商:Cypress Semiconductor 功能描述: |
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