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參數(shù)資料
| 型號： | MT4C4M4Ax |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DRAM |
| 中文描述： | 內存 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 360K |
| 代理商： | MT4C4M4AX |
4
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 4
FPM DRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Pin Relative to V
SS
3.3V............................................. ......... -1V to +4.6V
5V................................................ ............ -1V
TO
+7V
Voltage on NC, Inputs or I/O Pins Relative to V
SS
3.3V............................................. ......... -1V to +5.5V
5V................................................ ............ -1V
TO
+7V
Operating Temperature, T
A
(ambient) ....0°C to +70°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ................................................... 1W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional opera-
tion of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 5, 6) (V
CC
(MIN)
￡
V
CC
￡
V
CC
(MAX))
3.3V
5V
PA RA METER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE:
Valid Logic 1; All inputs, I/Os and any NC
INPUT LOW VOLTAGE:
Valid Logic 0; All inputs, I/Os and any NC
INPUT LEAKAGE CURRENT:
Any input at V
IN
[0V
￡
V
IN
￡
V
CC
(MAX)];
All other pins not under test = 0V
OUTPUT HIGH VOLTAGE:
I
OUT
= -2mA
OUTPUT LOW VOLTAGE:
I
OUT
= 2mA
OUTPUT LEAKAGE CURRENT:
Any output at V
OUT
[0V
￡
V
OUT
￡
V
CC
(MAX)];
DQ is disabled and in High-Z state
SY MBOL
V
CC
MIN
3
MA X
3.6
MIN
4.5
MA X
5.5
UNITS NOTES
V
V
IH
2
5.5
2.4
Vcc+1
V
24
V
IL
-1.0
0.8
-0.5
0.8
V
24
I
I
-2
2
-2
2
μA
V
OH
2.4
–
2.4
–
V
V
OL
–
0.4
–
0.4
V
I
OZ
-5
5
-5
5
μA
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