參數(shù)資料
型號: MT55L256L18P1
廠商: Micron Technology, Inc.
英文描述: 3.3V I/O,256K x 18,Flow-Through ZBT SRAM(3.3V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
中文描述: 3.3V的I / O的256 × 18,流量通過ZBT SRAM的電壓(3.3V輸入/輸出,4Mb的流通式同步靜態(tài)存儲器)
文件頁數(shù): 13/25頁
文件大小: 434K
代理商: MT55L256L18P1
13
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_2.p65
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
PRELIMINARY
4Mb: 256K x 18, 128K x 32/36
PIPELINED ZBT SRAM
State Diagram for ZBT SRAM
DESELECT
BEGIN
READ
BURST
READ
BEGIN
WRITE
DS
DS
DS
BURST
WRITE
READ
DS
WRITE
WRITE
BURST
READ
WRITE
READ
BURST
BURST
READ
BURST
DS
WRTE
KEY:
COMMAND
DS
READ
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE or
CONTINUE DESELECT
BURST
READ
WRITE
NOTE:
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
相關(guān)PDF資料
PDF描述
MT55L256V18P1 2.5V I/O,256K x 18,Flow-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲器)
MT55L512L18P-1 IBM AT-AT NULL MODEM CABL15 FT FF
MT58L128L18D 128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
MT58L64L32D 64K x 32,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
MT58L128L18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT55L256L18P1F-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT55L256L18P1T-7.5 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT55L256L18P1T-7.5 TR 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V
MT55L256L18P1T-7.5IT 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel
MT55L256L18P1T-7.5TR 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel