參數(shù)資料
型號(hào)： MT54W4MH9BF-4
廠商： Micron Technology, Inc.
英文描述： 36Mb QDR⑩II SRAM 2-WORD BURST
中文描述： ⑩分配36MB四年防務(wù)審查II SRAM的2字爆
文件頁(yè)數(shù)： 10/27頁(yè)
文件大小： 302K
代理商： MT54W4MH9BF-4
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V V
DD
, HSTL, QDRIIb2 SRAM
ADVANCE
36Mb: 1.8V V
DD
, HSTL, QDRIIb2 SRAM
MT54W2MH18B_A.fm - Rev 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10
2002, Micron Technology Inc.
Q_
Output
Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K
and K# rising edges if C and C# are tied HIGH. This bus operates in response to R# commands.
See Ball Assignment figures for ball site location of individual signals. The x8 device uses D0-
D7. The x9 device uses D0-D8. The x18 device uses Q0–Q17. Remaining signals are NC.
The x36
device uses Q0–Q35. Remaining signals are NC.
Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for
range.
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC
Electrical Characteristics and Operating Conditions for range.
Power Supply: GND.
No Connect: These signals are not internally connected and may be connected to ground to
improve package heat dissipation.
V
DD
Supply
V
DD
Q
Supply
V
SS
NC
Supply
–
FBGA BALL DESCRIPTIONS (continued)
SYMBOL
TYPE
DESCRIPTION
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