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參數(shù)資料
| 型號： | MT58L64V32P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 64K的× 32，流水線，SCD的SyncBurst的SRAM（處理器，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 14/25頁 |
| 文件大?。?/td> | 487K |
| 代理商： | MT58L64V32P |
14
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
V
IH
￡
+4.6V for t
￡
t
KC/2 for I
￡
20mA
Undershoot:
V
IL
3
-0.7V for t
￡
t
KC/2 for I
￡
20mA
Power-up:
V
IH
￡
+3.6V and V
DD
￡
3.135V for t
￡
200ms
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V
OH
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
than the shown DC values. AC I/O curves are available upon request.
5. V
DD
Q should never exceed V
DD
. V
DD
and V
DD
Q can be connected together for 3.3V I/O.
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
￡
T
A
￡
+70°C; V
DD
= +3.3V +0.3V/-0.165V; V
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
Data bus (DQx)
Inputs
SY MBOL
V
IH
Q
V
IH
MIN
1.7
1.7
MA X
V
DD
Q + 0.3
V
DD
+ 0.3
UNITS
V
V
NOTES
1, 2
1, 2
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
V
IL
IL
I
IL
O
-0.3
-1.0
-1.0
0.7
1.0
1.0
V
1, 2
3
0V
￡
V
IN
￡
V
DD
Output(s) disabled,
0V
￡
V
IN
￡
V
DD
Q (DQx)
I
OH
= -2.0mA
I
OH
= -1.0mA
μA
μA
Output High Voltage
V
OH
V
OH
1.7
2.0
–
–
V
V
1, 4
1, 4
Output Low Voltage
I
OL
= 2.0mA
I
OL
= 1.0mA
V
OL
V
OL
–
–
0.7
0.4
V
V
1, 4
1, 4
Supply Voltage
Isolated Output Buffer Supply
V
DD
V
DD
Q
3.135
2.375
3.6
2.9
V
V
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L64L36P | 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L64V36P | 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L32D1 | 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L36D1 | 128K x 36，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| MT58L128L32P1 | 128K x 32，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L64V32PT-6 | 制造商:Cypress Semiconductor 功能描述:64KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L64V32PT-7.5 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 2M-Bit 64K x 32 4ns 100-Pin TQFP |
| MT58L64V32PT-7.5 IT | 制造商:Cypress Semiconductor 功能描述:64KX32 SRAM PLASTIC IND TEMP T |
| MT58L64V32PT-7.5 TR | 制造商:Cypress Semiconductor 功能描述:64KX32 SRAM PLASTIC TQFP 3.3V |
| MT58L64V36F | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
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