參數(shù)資料
型號(hào)： MT4C4M4E9TGS
廠商： Micron Technology, Inc.
英文描述： 4 MEG x 4 EDO DRAM
中文描述： 4邁可× 4 EDO公司的DRAM
文件頁(yè)數(shù)： 5/20頁(yè)
文件大?。?/td> 360K
代理商： MT4C4M4E9TGS
5
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 4
FPM DRAM
I
CC
OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 6) [Vcc (MIN)
￡
Vcc
￡
Vcc (MAX)]
3.3V
5V
2K
4K
2K
4K
PA RA METER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
IH
)
STANDBY CURRENT: CMOS (non-“S” version only)
(RAS# = CAS# = other inputs = V
CC
- 0.2V)
STANDBY CURRENT: CMOS (“S” version only)
(RAS# = CAS# = other inputs = V
CC
- 0.2V)
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
OPERATING CURRENT: FAST PAGE MODE
Average power supply current
(RAS# = V
IL
, CAS#, address cycling:
t
PC =
t
PC [MIN])
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
IH
:
t
RC =
t
RC [MIN])
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
t
RC =
t
RC [MIN])
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or
CBR cycling; RAS# =
t
RAS (MIN); WE# = V
CC
- 0.2V;
A0-A11, OE# and D
IN
= V
CC
- 0.2V or 0.2V
(D
IN
may be left open)
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with
RAS#
t
RASS (MIN) and CAS# held LOW;
WE# = V
CC
- 0.2V; A0-A11, OE# and
D
IN
= V
CC
- 0.2V or 0.2V (D
IN
may be left open)
SY M
I
CC
1
SPEED REFRESH REFRESH REFRESH REFRESH UNITS NOTES
ALL
1
1
1
1
mA
I
CC
2
ALL
500
500
500
500
mA
I
CC
2
ALL
150
150
150
150
μA
-5
-6
110
100
90
80
140
130
120
110
I
CC
3
mA
23
-5
-6
110
100
100
90
110
100
100
90
I
CC
4
mA
23
-5
-6
110
100
90
80
140
130
120
110
I
CC
5
mA
-5
-6
110
100
90
80
140
130
120
110
I
CC
6
mA
4, 7
ALL
300
300
300
300
μA
4, 7
I
CC
7
t
RC
62.5
31.25
62.5
31.25
μs
23
I
CC
8
ALL
300
300
300
300
μA
4, 7
CAPACITANCE
(Note: 6)
PA RA METER
Input Capacitance: Address pins
Input Capacitance: RAS#, CAS#, WE#, OE#
Input/Output Capacitance: DQ
SY MBOL
C
I
1
C
I
2
C
IO
MA X
5
7
7
UNITS
pF
pF
pF
相關(guān)PDF資料
PDF描述
MT4LDT832HG-5XS SMALL-OUTLINE DRAM MODULE
MT4LDT832HG-6XS SMALL-OUTLINE DRAM MODULE
MT2LDT432H Silver Mica Capacitor; Capacitance:1200pF; Capacitance Tolerance: 5%; Series:CDV30; Voltage Rating:1500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:No RoHS Compliant: No
MT54W4MH8BF-5 36Mb QDR⑩II SRAM 2-WORD BURST
MT54W4MH8BF-6 36Mb QDR⑩II SRAM 2-WORD BURST
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT4C4M4EX 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4 MEG x 4 EDO DRAM
MT4C5 制造商:EDAL 制造商全稱:EDAL 功能描述:SILICON FAST RECOVERY 3.0 AMP DIODES
MT4D232G-52B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Burst EDO Page Mode DRAM Module
MT4D232G-60B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Burst EDO Page Mode DRAM Module
MT4D232M-52B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Burst EDO Page Mode DRAM Module
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*