參數(shù)資料
型號(hào)： MT54W4MH9B-5
廠商： Micron Technology, Inc.
英文描述： 36Mb QDR⑩II SRAM 2-WORD BURST
中文描述： ⑩分配36MB四年防務(wù)審查II SRAM的2字爆
文件頁數(shù)： 14/27頁
文件大?。?/td> 302K
代理商： MT54W4MH9B-5
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V V
DD
, HSTL, QDRIIb2 SRAM
ADVANCE
36Mb: 1.8V V
DD
, HSTL, QDRIIb2 SRAM
MT54W2MH18B_A.fm - Rev 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
14
2002, Micron Technology Inc.
CAPACITANCE
THERMAL RESISTANCE
NOTE:
1. I
DD
is specified with no output current. I
DD
is linear with frequency. Typical value is measured at 6ns cycle time.
2. Typical values are measured at V
DD
= 1.8V, V
DD
Q = 1.5V, and temperature = 25°C.
3. Operating supply currents and burst mode currents are measured at 100 percent bus utilization.
4. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.
5. Average I/O current and power is provided for information purposes only and is not tested. Calculation assumes that all outputs are
loaded with C
L
(in farads), f = input clock frequency, half of outputs toggle at each transition (for example, n = 18 for x36), C
O
= 6pF,
V
DD
Q = 1.5V and uses the equations: Average I/O Power as dissipated by the SRAM is:
P = 0.5 × n x f x V
DD
Q
2
x (C
L
+ 2C
O
). Average I
DD
Q = n x f x V
DD
Q x (C
L
+ C
O
).
6. This parameter is sampled.
7. Average thermal resistance between the die and the case top surface per MIL SPEC 883 Method 1012.1.
8. Junction temperature is a function of total device power dissipation and device mounting environment. Measured per SEMI G38-
87.
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
0oC T
A
+70oC;
V
DD
= MAX unless otherwise noted
MAX
DESCRIPTION
CONDITIONS
SYMBOL
TYP
-4
-5
-6
-7.5
UNITS
NOTES
Operating Supply
Current: DDR
All inputs V
IL
or V
IH
;
Cycle time
Outputs open
t
KHKH =
t
KHKH (MIN);
Device in NOP state;
All addresses/data static
Cycle time = 0; Input Static
t
KHKH (MIN
);
I
DD
(x8, x9, x18)
(x36)
TBD
600
800
490
655
415
550
340
450
mA
1, 2, 3
Standby Supply
Current: NOP
I
SB1
(x8, x9 x18)
(x36)
I
SB
I
DD
Q
(x8, x9)
(x18)
(x36)
TBD
200
210
75
170
180
75
150
160
75
125
135
75
mA
2, 4
Stop Clock Current
Output Supply
Current: DDR
(Information only)
TBD
mA
2
C
L
= 15pF
TBD
32
71
142
25
57
113
21
47
95
17
38
76
mA
5
DESCRIPTION
CONDITIONS
SYMBOL
C
I
TYP
4
MAX
5
UNITS
pF
NOTES
6
Address/Control Input
Capacitance
Output Capacitance (Q)
Clock Capacitance
T
A
= 25oC; f = 1 MHz
C
O
C
CK
6
5
7
6
pF
pF
6
6
DESCRIPTION
CONDITIONS
SYMBOL
TYP
25
UNITS
oC/W
NOTES
6, 7
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
Soldered on a 4.25 x 1.125 inch, 4-layer
printed circuit board
JA
JC
10
12
oC/W
oC/W
6
JB
6, 8
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