參數(shù)資料
型號: MT4C4M4E9DJS
廠商: Micron Technology, Inc.
英文描述: 4 MEG x 4 EDO DRAM
中文描述: 4邁可× 4 EDO公司的DRAM
文件頁數(shù): 16/20頁
文件大?。?/td> 360K
代理商: MT4C4M4E9DJS
16
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4 MEG x 4
FPM DRAM
RAS#-ONLY REFRESH CYCLE
(OE# and WE# = DON’T CARE)
ROW
V
IL
CAS#
V
IL
ADDR
V
IL
RAS#
tRC
tRAS
tRP
tCRP
tASR
tRAH
ROW
OPEN
DQ
V
OL
tRPC
CBR REFRESH CYCLE
(Addresses and OE# = DON’T CARE)
tRP
V
IL
RAS#
tRAS
OPEN
tCHR
tCSR
V
IL
V
OL
CAS#
DQ
tRP
tRAS
tRPC
tCSR
tRPC
tCHR
tCP
V
IL
tWRP
tWRH
tWRP
tWRH
WE#
DON’T CARE
UNDEFINED
NOTE 1
-5
-6
SYMBOL
t
RAS
t
RC
t
RP
t
RPC
t
WRH
t
WRP
MIN
50
84
30
5
8
8
MAX
10,000
MIN
60
104
40
5
10
10
MAX
10,000
UNITS
ns
ns
ns
ns
ns
ns
TIMING PARAMETERS
-5
-6
SYMBOL
t
ASR
t
CHR
t
CP
t
CRP
t
CSR
t
RAH
MIN
0
8
8
5
5
9
MAX
MIN
0
10
10
5
5
10
MAX
UNITS
ns
ns
ns
ns
ns
ns
NOTE:
1. End of CBR REFRESH cycle.
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