參數(shù)資料
型號(hào): MT55L256V18P1
廠商: Micron Technology, Inc.
英文描述: 2.5V I/O,256K x 18,Flow-Through ZBT SRAM(2.5V輸入/輸出,4Mb流通式同步靜態(tài)存儲(chǔ)器)
中文描述: 2.5VI /輸出,256 × 18,流量通過ZBT SRAM的電壓(2.5V輸入/輸出,4Mb的流通式同步靜態(tài)存儲(chǔ)器)
文件頁數(shù): 3/25頁
文件大?。?/td> 434K
代理商: MT55L256V18P1
3
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_2.p65
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
PRELIMINARY
4Mb: 256K x 18, 128K x 32/36
PIPELINED ZBT SRAM
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The data associated with the address is required
two cycles later, or on the rising edge of clock cycle three.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During a BYTE WRITE cycle, BWa#
controls DQa pins; BWb# controls DQb pins; BWc#
controls DQc pins; and BWd# controls DQd pins. Cycle
types can only be defined when an address is loaded,
i.e., when ADV/LD# is LOW. Parity/ECC bits are only
available on the x18 and x36 versions.
Micron’s 4Mb ZBT SRAMs operate from a +3.3V V
DD
power supply, and all inputs and outputs are LVTTL-
compatible. Users can choose either a 2.5V or 3.3V I/O
version. The device is ideally suited for systems requir-
ing high bandwidth and zero bus turnaround delays.
Please
refer
to
www.micronsemi.com/datasheets/zbtds.html
Micron’s
相關(guān)PDF資料
PDF描述
MT55L512L18P-1 IBM AT-AT NULL MODEM CABL15 FT FF
MT58L128L18D 128K x 18,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
MT58L64L32D 64K x 32,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
MT58L128L18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128V18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT55L256V18P1T 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:Micron Technology Inc 功能描述:
MT55L256V18P1T-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT55L256V18P1T-6 制造商:Micron Technology Inc 功能描述:256K X 18 ZBT SRAM, 3.5 ns, PQFP100
MT55L256V18P1T-7.5TR 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:Micron Technology Inc 功能描述:
MT55L256V32P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb ZBT SRAM