參數(shù)資料
型號: MT58L64L32D
廠商: Micron Technology, Inc.
英文描述: 64K x 32,3.3V I/O, Pipelined, Double-Cycle Deselect,SyncBurst SRAM(2Mb,3.3V輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)RAM)
中文描述: 64K的x 32,3.3六/ O的流水線,雙循環(huán)取消,SyncBurst的SRAM(處理器,3.3V的輸入/輸出,流水線式,雙循環(huán)取消選擇,同步脈沖靜態(tài)內(nèi)存)
文件頁數(shù): 17/24頁
文件大小: 432K
代理商: MT58L64L32D
17
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L128L18D_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, DCD SYNCBURST SRAM
Q
50
V = 1.5V
Z = 50
Figure 1
Q
351
317
5pF
+3.3V
Figure 2
AC TEST CONDITIONS
Input pulse levels ................. V
IH
= (V
DD
/2.2) + 1.5V
....................V
IL
= (V
DD
/2.2) - 1.5V
Input rise and fall times..................................... 1ns
Input timing reference levels..................... V
DD
/2.2
Output reference levels ............................V
DD
Q/2.2
Output load ............................. See Figures 1 and 2
LOAD DERATING CURVES
The Micron 128K x 18, 64K x 32, and 64K x 36
SyncBurst SRAM timing is dependent upon the capaci-
tive loading on the outputs.
Consult the factory for copies of I/O current versus
voltage curves.
Output Load Equivalents
相關(guān)PDF資料
PDF描述
MT58L128L18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128V18F 128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L64L32F 64K x 32,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L64L36F 64K x 36,Flow-Through SyncBurst SRAM(2Mb,流通式同步脈沖靜態(tài)RAM)
MT58L128L18P 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb,流水線式,單循環(huán)取消選擇,同步脈沖靜態(tài)存儲器)
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