
11.0 Device Characteristics
(Continued)
Revision 1.2
233
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11.2 DC CHARACTERISTICS OF PINS, BY I/O BUFFER TYPES
The following tables summarize the DC characteristics of all device pins described in Section 1.2 on page 20. The charac-
teristics describe the general I/O buffer types defined in Table 1 on page 20. For exceptions, refer to Section 11.2.9 on
page 235. The DC characteristics of the LPC Interface meet the PCI Local Bus Specification
(Rev 2.2 December 18, 1998)
for 3.3V DC signaling. The DC characteristics of the ACCESS.bus Interface meet the SMBus (
Rev 1.1 Dec. 11, 1998
) and
ACCESS.bus
(Rev. 3.0 Sep. 1995
) specifications for on-board devices.
11.2.1
Symbol:
IN
CS
Input, CMOS Compatible with Schmitt Trigger
11.2.2
Symbol:
IN
PCI
Input, PCI 3.3V
11.2.3
Symbol:
IN
SM
Input, SMBus Compatible
Symbol
Parameter
Conditions
Min
Max
Unit
V
IH
Input High Voltage
0.75 V
SUP1
1. V
SUP
is V
DD
, V
SB
or V
PP
according to the input power well.
2. Not tested. Guaranteed by design.
3. Not tested. Guaranteed by characterization.
4. Maximum 10
μ
A for all pins together. Not tested. Guaranteed by characterization.
5.5
2
V
V
IL
Input Low Voltage
0.5
1
1.1
V
V
HY
Input Hysteresis
200
3
mV
I
IL
Input Leakage Current
0 < V
IN
< V
SUP
±
1
4
μ
A
Symbol
Parameter
Conditions
Min
Max
Unit
V
IH
Input High Voltage
0.5 V
DD
V
DD
+ 0.5
1
1. Not tested. Guaranteed by design.
2. Input leakage current includes the output leakage of the bidirectional buffers with TRI-STATE outputs.
3. Maximum 10
μ
A for all pins together. Not tested. Guaranteed by characterization.
V
V
IL
Input Low Voltage
0.5
1
0.3 V
DD
V
l
IL2
Input Leakage Current
0 < V
IN
< V
DD
±
1
3
μ
A
Symbol
Parameter
Conditions
Min
Max
Unit
V
IH
Input High Voltage
1.4
5.5
1
1. Not tested. Guaranteed by design.
2. Input leakage current includes the output leakage of the bidirectional buffers with TRI-STATE outputs.
3. Maximum 10
μ
A for all pins together. Not tested. Guaranteed by characterization.
V
V
IL
Input Low Voltage
0.5
1
0.8
V
I
IL2
Input Leakage Current
0 < V
IN
< V
SB
±
1
3
μ
A