| 型號 | 廠商 | 描述 |
| k4d551638f-tc36 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d551638f-tc40 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d551638f-tc50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d551638f-tc60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553235f-gc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256M GDDR SDRAM |
| k4d553235f-gc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256M GDDR SDRAM |
| k4d553235f-gc2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256M GDDR SDRAM |
| k4d553235f-gc33 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256M GDDR SDRAM |
| k4d553238f-gc2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RECTIFIER BRIDGE 1A 50V 50A-ifsm 1.1V-vf 10uA-ir DFM 50/TUBE |
| k4d553238f-gc33 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-gc36 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-gc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-jc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-jc2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-jc33 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-jc36 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes |
| k4d553238f-jc40 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4d553238f-jc50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit GDDR SDRAM |
| k4e151611 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| k4e151611d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| k4e151612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| k4e171611d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| k4e171612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 22uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk |
| k4e160411d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk |
| k4e160412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| k4e170411d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| k4e170412d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| k4e160811d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| k4e160812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk |
| k4e170811d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| k4e170812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| k4e641611d-tc50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661611d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661611d-tc50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661611d-tc60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641611d-tc60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612b-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612b-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661612b-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661612b-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661612b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612c-45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612c-50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612c-60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e641612c-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661612c-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| k4e661612c-tc45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |