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參數(shù)資料
| 型號(hào)： | K4E661612B-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/36頁 |
| 文件大?。?/td> | 885K |
| 代理商： | K4E661612B-L |
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CMOS DRAM
K4E661612B,
K4E641612B
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4E661612B
K4E641612B
I
CC1
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
2
2
2
2
mA
mA
I
CC3
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-50
-60
110
100
90
120
110
100
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
500
300
500
300
uA
uA
I
CC6
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
400
400
uA
I
CCS
L
Don
′
t care
400
400
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E661612B-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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