參數(shù)資料
型號(hào): K4D553235F-GC33
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256M GDDR SDRAM
中文描述: 256M GDDR SDRAM內(nèi)存
文件頁(yè)數(shù): 8/18頁(yè)
文件大小: 386K
代理商: K4D553235F-GC33
256M GDDR SDRAM
K4D553235F-GC
- 8 -
Rev 1.6 (May 2005)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for
variety of different applications. The default value of the mode register is not defined, therefore the mode register must be
written after EMRS setting for proper operation. The mode register is written by asserting low on CS, RAS, CAS and
WE(The DDR SDRAM should be in active mode with CKE already high prior to writing into the mode register). The state of
address pins A
0
~ A
11
and BA
0
, BA
1
in the same cycle as CS, RAS, CAS and WE going low is written in the mode register.
Minimum two clock cycles are requested to complete the write operation in the mode register. The mode register contents
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the
idle state. The mode register is divided into various fields depending on functionality. The burst length uses A
0
~ A
2
,
addressing mode uses A
3
, CAS latency(read latency from column address) uses A
4
~ A
6
. A
7
is used for test mode. A
8
is
used for DLL reset. A
7,
A
8
, BA
0
and BA
1
must be set to low for normal MRS operation. Refer to the table for specific codes
for various burst length, addressing modes and CAS latencies.
MODE REGISTER SET(MRS)
Address Bus
Mode Register
CAS Latency
A
6
0
0
0
0
1
1
1
1
A
5
0
0
1
1
0
0
1
1
A
4
0
1
0
1
0
1
0
1
Latency
Reserved
Reserved
Reserved
3
4
5
6
Reserved
Burst Length
A
2
A
1
A
0
Burst Type
Sequential
Reserved
2
4
8
Reserved
Reserved
Reserved
Reserved
Interleave
Reserved
2
4
8
Reserved
Reserved
Reserved
Reserved
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Burst Type
A
3
0
1
Type
Sequential
Interleave
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
MRS Cycle
Command
*1 : MRS can be issued only at all banks precharge state.
*2 : Minimum
t
RP
is required to issue MRS command.
CK, CK
Precharge
All Banks
NOP
~
~
NOP
~
~
MRS
NOP
NOP
2
0
1
6
12
10
11
Any
NOP
Command
t
RP
t
MRD
=4 t
CK
BA
1
BA
0
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
RFU
0
RFU
DLL
TM
CAS Latency
BT
Burst Length
BA
0
0
1
A
n
~ A
0
MRS
EMRS
DLL
A
8
0
1
DLL Reset
No
Yes
Test Mode
A
7
0
1
mode
Normal
Test
NOP
~
~
相關(guān)PDF資料
PDF描述
K4D553238F-GC2A RECTIFIER BRIDGE 1A 50V 50A-ifsm 1.1V-vf 10uA-ir DFM 50/TUBE
K4D553238F-GC33 256Mbit GDDR SDRAM
K4D553238F-GC36 256Mbit GDDR SDRAM
K4D553238F 256Mbit GDDR SDRAM
K4D553238F-GC 256Mbit GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D553235F-GC33T00 制造商:Samsung Semiconductor 功能描述:256MSGDDRDDR SGRAMX32FBGA - Tape and Reel
K4D553235F-VC2A000 制造商:Samsung 功能描述:DDR SGRAM X32 FBGA - Trays
K4D553238F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D553238F-GC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM
K4D553238F-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM