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參數(shù)資料
| 型號(hào)： | K4E160411D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk |
| 中文描述： | 4米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù)： | 2/21頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | K4E160411D |
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K4E170411D, K4E160411D
K4E170412D, K4E160412D
CMOS DRAM
PIN CONFIGURATION
(Top Views)
Pin Name
Pin Function
A0 - A11
Address Inputs (4K Product)
A0 - A10
Address Inputs (2K Product)
DQ0 - 3
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5.0V)
Power(+3.3V)
N.C
No Connection (2K Ref. product)
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
*A11 is N.C for K4E160411(2)D(5V/3.3V,
2K Ref.
product)
B : 300mil 26(24) SOJ
F: 300mil 26(24) TSOP II
K4E17(6)0411(2)D-B
K4E17(6)0411(2)D-F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170411D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x20 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E160412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160811D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170412C-FC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 3.3V 24-Pin TSOP-II |
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