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參數(shù)資料
| 型號(hào)： | K4E170812D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 200萬× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 257K |
| 代理商： | K4E170812D |
K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
RAS
t
CAS
t
RSH
t
CSH
t
RAL
t
CWD
t
RWD
t
AWD
t
CPWD
t
HPC
t
HPRWC
t
RASP
t
CPA
t
OEA
t
OED
t
OEH
89
109
ns
Read-modify-write cycle time
121
145
ns
Access time from RAS
55
65
ns
3,4,10,12
Access time from CAS
18
20
ns
3,4,5,12
Access time from column address
30
35
ns
3,10,12
RAS pulse width
55
10K
65
10K
ns
CAS pulse width
13
10K
15
10K
ns
RAS hold time
18
20
ns
CAS hold time
43
50
ns
Column address to RAS lead time
30
35
ns
CAS to W delay time
35
39
ns
7
RAS to W delay time
72
84
ns
7
Column address to W delay time
47
54
ns
7
CAS precharge to W delay time
52
59
ns
Hyper Page cycle time
25
30
ns
13
Hyper Page read-modify-write cycle time
53
61
ns
13
RAS pulse width (Hyper Page cycle)
55
200K
65
200K
ns
Access time from CAS precharge
33
40
ns
3
OE access time
18
20
ns
OE to data delay
18
20
ns
OE command hold time
18
20
ns
( Note 11 )
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| K4E641611D-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E171611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E-1KOHM | 制造商:Panasonic Electric Works 功能描述: |
| K4E-24V-1 | 制造商:M.E.C. Relays 功能描述: 制造商:Master Electronic Controls (MEC) 功能描述: 制造商:Panasonic Electric Works 功能描述: |
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