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參數(shù)資料
| 型號(hào)： | K4E661612B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù)： | 5/36頁(yè) |
| 文件大?。?/td> | 885K |
| 代理商： | K4E661612B |
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CMOS DRAM
K4E661612B,
K4E641612B
CAPACITANCE
(T
A
=25
°
C, V
CC
=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
Test condition : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
74
84
104
ns
Read-modify-write cycle time
t
RWC
101
113
138
ns
Access time from RAS
t
RAC
45
50
60
ns
3,4,10
Access time from CAS
t
CAC
12
13
15
ns
3,4,5
Access time from column address
t
AA
23
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
t
CEZ
3
3
3
ns
3
Output buffer turn-off delay from CAS
3
13
3
13
3
13
ns
6,21
OE to output in Low-Z
t
OLZ
3
3
3
ns
3
Transition time (rise and fall)
t
T
1
50
1
50
1
50
ns
2
RAS precharge time
t
RP
25
30
40
ns
RAS pulse width
t
RAS
45
10K
50
10K
60
10K
ns
RAS hold time
t
RSH
t
CSH
8
8
10
ns
CAS hold time
35
38
40
ns
CAS pulse width
t
CAS
7
5K
8
10K
10
10K
ns
RAS to CAS delay time
t
RCD
11
33
11
37
14
45
ns
4
RAS to column address delay time
t
RAD
9
22
9
25
12
30
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
7
7
10
ns
Column address set-up time
t
ASC
0
0
0
ns
13
Column address hold time
t
CAH
7
7
10
ns
13
Column address to RAS lead time
t
RAL
23
25
30
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
0
0
0
ns
8
Write command hold time
t
WCH
7
7
10
ns
Write command pulse width
t
WP
6
7
10
ns
Write command to RAS lead time
t
RWL
8
8
10
ns
Write command to CAS lead time
t
CWL
t
DS
7
7
10
ns
16
Data set-up time
0
0
0
ns
9,19
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E641612C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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