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參數(shù)資料
| 型號(hào)： | K4E171611D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 100萬× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 5/35頁 |
| 文件大小： | 553K |
| 代理商： | K4E171611D |
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K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-50
-60
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
79
84
104
ns
Read-modify-write cycle time
t
RWC
t
RAC
105
115
140
ns
Access time from RAS
45
50
60
ns
3,4,10
Access time from CAS
t
CAC
t
AA
14
15
17
ns
3,4,5
Access time from column address
23/*20
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
t
CEZ
3
3
3
ns
3
Output buffer turn-off delay from CAS
3
13
3
13
3
15
ns
6,19
OE to output in Low-Z
t
OLZ
3
3
3
ns
3
Transition time (rise and fall)
t
T
t
RP
2
50
2
50
2
50
ns
2
RAS precharge time
30
30
40
ns
RAS pulse width
t
RAS
t
RSH
45
10K
50
10K
60
10K
ns
RAS hold time
13
13
17
ns
CAS hold time
t
CSH
t
CAS
36
40
50
ns
CAS pulse width
7 / *6.5
10K
8
10K
10
10K
ns
18
RAS to CAS delay time
t
RCD
t
RAD
19
31
20
35
20
43
ns
4
RAS to column address delay time
14
22
15
25
15
30
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
t
ASC
9
10
10
ns
Column address set-up time
0
0
0
ns
11
Column address hold time
t
CAH
t
RAL
7
8
10
ns
11
Column address to RAS lead time
23
25
30
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
0
ns
8
Write command hold time
8
10
10
ns
Write command pulse width
t
WP
t
RWL
8
10
10
ns
Write command to RAS lead time
10
13
15
ns
Write command to CAS lead time
t
CWL
7
8
10
ns
14
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
* KM416C1204DT-45 (5V, 1K Refresh) only
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E171612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E-1KOHM | 制造商:Panasonic Electric Works 功能描述: |
| K4E-24V-1 | 制造商:M.E.C. Relays 功能描述: 制造商:Master Electronic Controls (MEC) 功能描述: 制造商:Panasonic Electric Works 功能描述: |
| K4E-24V-6 | 制造商:Panasonic Electric Works 功能描述: |
| K4E-24V-9 | 制造商:M.E.C. Relays 功能描述: |
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