- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374256 > K4E641612C-60 (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 16bit CMOS Dynamic RAM with Extended Data Out PDF資料下載
參數(shù)資料
| 型號： | K4E641612C-60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/36頁 |
| 文件大?。?/td> | 884K |
| 代理商： | K4E641612C-60 |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
CMOS DRAM
K4E661612C,K4E641612C
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=V
IH
, Address=Don
′
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4E661612C
K4E641612C
I
CC1
Don
′
t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
mA
mA
I
CC3
Don
′
t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-50
-60
100
90
80
100
90
80
mA
mA
mA
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
mA
uA
I
CC6
Don
′
t care
-45
-50
-60
130
120
110
130
120
110
mA
mA
mA
I
CC7
L
Don
′
t care
350
350
uA
I
CCS
L
Don
′
t care
350
350
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E641612C-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TC45 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TC50 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C-TC60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E641612C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-T45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-T50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612C-T60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。