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參數(shù)資料
| 型號(hào)： | K4E151611D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 100萬(wàn)× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù)： | 6/35頁(yè) |
| 文件大小： | 553K |
| 代理商： | K4E151611D |
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K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
AC CHARACTERISTICS
(Continued)
* KM416C1204DT-45 (5V, 1K Refresh) only
Parameter
Symbol
-45
-50
-60
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
0
0
0
ns
9,17
Data hold time
7
8
10
ns
9,17
Refresh period (1K, Normal)
16
16
16
ms
Refresh period (4K, Normal)
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
28
32
36
ns
7,13
RAS to W delay time
59
67
79
ns
7
Column address W delay time
37
42
49
ns
7
CAS precharge to W delay time
39
47
54
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
15
CAS hold time (CAS -before-RAS refresh)
10
10
10
ns
16
RAS to CAS precharge time
5
5
5
ns
Access time from CAS precharge
25
28
35
ns
3
Hyper Page mode cycle time
18
20
25
ns
18
Hyper Page read-modify-write cycle time
39
47
56
ns
18
CAS precharge time (Hyper Page cycle)
7 / *6.5
8
10
ns
12
RAS pulse width (Hyper Page cycle)
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
27
30
35
ns
OE access time
13
13
15
ns
3
OE to data delay
10
13
15
ns
Output buffer turn off delay time from OE
3
13
3
13
3
15
ns
6
OE command hold time
10
13
15
ns
Output data hold time
4
5
5
ns
Output buffer turn off delay from RAS
3
13
3
13
3
15
ns
6,19
Output buffer turn off delay from W
3
13
3
13
3
15
ns
6
W to data delay
15
15
15
ns
OE to CAS hold time
5
5
5
ns
CAS hold time to OE
5
5
5
ns
OE precharge time
5
5
5
ns
W pulse width (Hyper Page Cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
20,21,22
RAS precharge time (C-B-R self refresh)
79
90
110
ns
20,21,22
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
20,21,22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E151612D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171611D | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171612D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 22uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K4E160411D | Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk |
| K4E160412D | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E151611D-JC60000 | 制造商:Samsung SDI 功能描述:# 76-58489 |
| K4E151611DTC60 | 制造商:Samsung Semiconductor 功能描述: |
| K4E151612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E160411C-BC60 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 16M-Bit 4Mx4 5V 24-Pin SOJ |
| K4E160411D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
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