型號(hào) | 廠商 | 描述 |
k4h561638c-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC |
k4h561638c-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638c-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638c-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638d-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SSOP -40 to 125 |
k4h561638d-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638d-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC -40 to 125 |
k4h561638d-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638d-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638d-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638e-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 |
k4h561638e-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125 |
k4h561638e-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125 |
k4h561638e-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC |
k4h561638e-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC |
k4h561638e-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638f-tcc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC |
k4h561638f-tccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
k4h561638m-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638m-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP |
k4h561638m-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638m-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor, 10 Ch. 24-SOIC -40 to 85 |
k4h561638m-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 164 kSPS ADC Parallel Out, Direct I/F to DSP/uProcessor, 10 Ch. 24-SOIC -40 to 85 |
k4h561638f-ucc4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
k4h561638f-uccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb F-die DDR400 SDRAM Specification |
k4h561638a-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638a-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638a-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC |
k4h561638a-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638a-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638b-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
k4h561638d-gca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL |
k4h561638d-gcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-123 3K/REEL |
k4h561638d-gcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-523 3K/REEL |
k4h561638d-gla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL |
k4h561638d-glb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL |
k4h561638d-glb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL |
k4h560438d-gc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR 256Mb |
k4h560438d-gca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR 256Mb |
k4h560438d-gcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR 256Mb |
k4h560438d-gcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR 256Mb |
k4h560438d-gla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DDR 256Mb |
k4h560438e-zlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Connector Kit; Contents Of Kit:C14610F0240001 24 position bulkhead housing double latch, C14610B0241021 24 position female insert wire protect, Without spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes |
k4h560438e-zlb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Connector Kit; Contents Of Kit:C14610G0245001 24 position hood PG 21 double latch low profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
k4h560438e-zla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:6; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; Features:Spring Cover; For Use With:C146 Rectangular Circular Connectors RoHS Compliant: Yes |
k4h560438e-zcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | CSM, CER 103PF 1000V 10% 1210 |
k4h560438e-zcb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
k4h560438e-glb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 36.3Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-23 3K/REEL |
k4h560438e-glb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-23 3K/REEL |
k4h560438e-nc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL |