- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374256 > K4D553238F-GC (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Mbit GDDR SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4D553238F-GC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mbit GDDR SDRAM |
| 中文描述： | 片256Mbit GDDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 309K |
| 代理商： | K4D553238F-GC |
256M GDDR SDRAM
K4D553238F-GC
- 11 -
Rev 1.3 (Mar. 2005)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with outputs open.
2. Refresh period is 32ms.
Parameter
Symbol
Test Condition
Version
Unit
Note
-2A
-33
-36
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
340
310
290
mA
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
15
15
15
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
75
70
65
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
70
65
60
mA
Active Standby Current
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
240
220
210
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
400
370
360
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
380
340
320
mA
1
Self Refresh Current
I
CC6
CKE
≤
0.2V
10
10
10
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
620
560
530
mA
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage ;DQ
V
IH
V
REF
+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D553238F-JC | 256Mbit GDDR SDRAM |
| K4D553238F-JC2A | 256Mbit GDDR SDRAM |
| K4D553238F-JC33 | 256Mbit GDDR SDRAM |
| K4D553238F-JC36 | ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes |
| K4D553238F-JC40 | 256Mbit GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D553238F-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-GC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-GC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。