參數(shù)資料
型號： K4E641611D-TC60
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述： 4米× 16位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出
文件頁數(shù)： 8/36頁
文件大?。?/td> 882K
代理商： K4E641611D-TC60
CMOS DRAM
K4E661611D,
K4E641611D
K4E64(6)1611C Truth Table
RAS
LCAS
UCAS
W
OE
DQ0 - DQ7
DQ8-DQ15
STATE
H
X
X
X
X
Hi-Z
Hi-Z
Standby
L
H
H
X
X
Hi-Z
Hi-Z
Refresh
L
L
H
H
L
DQ-OUT
Hi-Z
Byte Read
L
H
L
H
L
Hi-Z
DQ-OUT
Byte Read
L
L
L
H
L
DQ-OUT
DQ-OUT
Word Read
L
L
H
L
H
DQ-IN
-
Byte Write
L
H
L
L
H
-
DQ-IN
Byte Write
L
L
L
L
H
DQ-IN
DQ-IN
Word Write
L
L
L
H
H
Hi-Z
Hi-Z
-
NOTES
An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Transition times are measured between
V
IH
(min) and V
IL
(max) and are assumed to be 2ns for all inputs.
Measured with a load equivalent to 2 TTL load and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max) can be met,
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then access time is controlled exclusively by
t
CAC
.
Assumes that
t
RCD
≥
t
RCD
(max).
These parameter defines the time at which the output achieves the open circuit condition and is not referenced to V
oh
or V
ol
.
t
WCS
,
t
RWD
,
t
CWD
and
t
AWD
are non restrictive operating parameters. They are included in the data sheet as electrical charac-
teristics only. If
t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the data output will remain high impedance for the dura-
tion of the cycle. If
t
CWD
≥
t
CWD
(min),
t
RWD
≥
t
RWD
(min) and
t
AWD
≥
t
AWD
(min), then the cycle is a read-modify-write cycle and the
data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of
the data out is indeterminate.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle
and read-modify-write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max) can be met.
t
RAD
(max) is specified as a reference point only.
If
t
RAD
is greater than the specified
t
RAD
(max) limit, then access time is controlled by
t
AA
.
These specifications are applied in the test mode.
In test mode read cycle, the value of
t
RAC
,
t
AA
,
t
CAC
is delayed by 2ns to 5ns for the specified values. These parameters
should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
t
ASC
,
t
CAH
are referenced to the earlier CAS falling edge.
t
CP
is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
7.
6.
5.
10.
9.
8.
13.
12.
11.
15.
14.
3.
2.
1.
4.
相關(guān)PDF資料
PDF描述
K4E641612B 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-L 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B-L 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E661612B-TC 4M x 16bit CMOS Dynamic RAM with Extended Data Out
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4E641612B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612B-TC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4E641612C-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*