參數(shù)資料
型號: K4D553238F-JC50
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mbit GDDR SDRAM
中文描述: 片256Mbit GDDR SDRAM內存
文件頁數(shù): 14/17頁
文件大?。?/td> 297K
代理商: K4D553238F-JC50
256M GDDR SDRAM
K4D553238F-JC
- 14 -
Rev 1.0 (Mar. 2004)
Note 1 :
- The JEDEC GDDR specification currently defines the output data valid window(tDV) as the time period when the data
strobe and all data associated with that data strobe are coincidentally valid.
- The previously used definition of tDV(=0.35tCK) artificially penalizes system timing budgets by assuming the worst case
output vaild window even then the clock duty cycle applied to the device is better than 45/55%
- A new AC timing term, tQH which stands for data output hold time from DQS is difined to account for clock duty cycle
variation and replaces tDV
- tQHmin = tHP-X where
. tHP=Minimum half clock period for any given cycle and is defined by clock high or clock low time(tCH,tCL)
. X=A frequency dependent timing allowance account for tDQSQmax
tQH Timing (CL4, BL2)
1
tHP
CK, CK
DQS
DQ
CS
2
5
0
COMMAND
READA
tQH
Qa0
tDQSQ(max)
tDQSQ(max)
Qa1
3
4
相關PDF資料
PDF描述
K4E151611 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E151611D 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E151612D 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E171611D 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E171612D Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 22uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk
相關代理商/技術參數(shù)
參數(shù)描述
K4D55323QF-GC33 制造商:Samsung Semiconductor 功能描述:
K4D623237A-QC60 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Semiconductor 功能描述:2M X 32 DDR DRAM, 5.5 ns, PQFP100
K4D623238B-GC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM
K4D623238B-GC/L33 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM
K4D623238B-GC/L40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit DDR SDRAM