| 型號(hào) | 廠商 | 描述 |
| k4s643233h-f1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4s643233h-fe 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4s643233h-fhe 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4s643233h-g 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4s643233h-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4s643233h-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Mobile-SDRAM |
| k4t1g044qa 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g044qa-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g044qa-zce6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g084qa-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g084qa-zce6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g164qa-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g164qa-zce6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb A-die DDR2 SDRAM Specification |
| k4t1g044qm-zccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g084qm-zccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g164qm-zccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g044qm 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g044qm-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g084qm-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t1g164qm-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Gb M-die DDR2 SDRAM Specification |
| k4t51043qc-zlcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIN Audio Connector; No. of Contacts:8; Contact Termination:Solder; Gender:Male RoHS Compliant: Yes |
| k4t51043qc-zclcc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zcld5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zcld6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | CAP 33PF 3000V 5% NP0(C0G) SMD-1808 TR-7 PLATED-NI/SN |
| k4t51043qc-zce6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zce7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zcd6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zccc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zld5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | OSC 3.3V SMT 7X5 CMOS |
| k4t51043qc-zle6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zle7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zcle6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4t51043qc-zcd5 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mb C-die DDR2 SDRAM |
| k4 2 |
Electronic Theatre Controls, Inc. | KS SERIES KEY SWITCHES |
| k5-c 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k5-n 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k5-n1 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k5-r2 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k5-s 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k5-s2 2 3 4 |
MITSUMI ELECTRIC CO LTD | Adjustable Type Coils |
| k590 2 3 |
Electronic Theatre Controls, Inc. | Polyester Film Radial Lead Capacitor; Capacitance: 4700uF; Voltage: 100V; Packaging: Bulk |
| k596 2 3 |
江蘇長電科技股份有限公司 | Si N-CHANNEL JUNCTION FET |
| k596-to-92s 2 3 |
江蘇長電科技股份有限公司 | Si N-CHANNEL JUNCTION FET |
| k5a3280ybc-t755 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3280ybc-t855 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3280ytc-t755 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3280ytc-t855 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3380ybc-t755 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3380ybc-t855 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |
| k5a3380ytc-t755 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MCP MEMORY |