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參數(shù)資料
| 型號： | K4E661611D-TC50 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 4/36頁 |
| 文件大小： | 882K |
| 代理商： | K4E661611D-TC50 |
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CMOS DRAM
K4E661611D,
K4E641611D
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
K4E661611D
K4E641611D
I
CC1
Don
′
t care
-50
-60
90
80
120
110
mA
mA
I
CC2
Normal
Don
′
t care
2
2
mA
I
CC3
Don
′
t care
-50
-60
90
80
120
110
mA
mA
I
CC4
Don
′
t care
-50
-60
100
90
110
100
mA
mA
I
CC5
Normal
Don
′
t care
1
1
mA
I
CC6
Don
′
t care
-50
-60
120
110
120
110
mA
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E661611D-TC60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641611D-TC60 | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612B-L | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E641612B-TC | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E661611D-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| K4E661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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