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參數(shù)資料
| 型號： | K4E170412D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 4位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大小： | 256K |
| 代理商： | K4E170412D |
K4E170411D, K4E160411D
K4E170412D, K4E160412D
CMOS DRAM
PIN CONFIGURATION
(Top Views)
Pin Name
Pin Function
A0 - A11
Address Inputs (4K Product)
A0 - A10
Address Inputs (2K Product)
DQ0 - 3
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5.0V)
Power(+3.3V)
N.C
No Connection (2K Ref. product)
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
*A11 is N.C for K4E160411(2)D(5V/3.3V,
2K Ref.
product)
B : 300mil 26(24) SOJ
F: 300mil 26(24) TSOP II
K4E17(6)0411(2)D-B
K4E17(6)0411(2)D-F
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| K4E170811D | 2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4E170811D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E170812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171611D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E171612D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| K4E-1KOHM | 制造商:Panasonic Electric Works 功能描述: |
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